new technique integrates graphene, graphene oxide and reduced graphene oxide onto silicon chips at room temperature /

Materials researchers at North Carolina State University have developed a technique that allows them to integrate graphene,graphene oxide (GO) and reduced graphene oxide (rGO) onto silicon substrates at room temperature by using nanosecond pulsed laser annealing. The advance raises the opportunity of creating modern electronic devices, and the researchers are already planning to spend the technique to create smart biomedical sensors.

Source: phys.org