When it comes to putting technology in space,size and mass are prime considerations. High-power gallium nitride-based high electron mobility transistors (HEMTs) are appealing in this regard because they fill the potential to replace bulkier, less efficient transistors, and are also more tolerant of the harsh radiation environment of space. Compared to similar aluminum gallium arsenide/gallium arsenide HEMTs,the gallium nitride-based HEMTs are ten times more tolerant of radiation-induced displacement damage.
Source: phys.org