An interdisciplinary team of scientists at the U.
S. Naval Research Laboratory (NRL),Electronics Science and Technology and Materials Science and Technology Divisions, has demonstrated hyperthermal ion implantation (HyTII) as an effective means of substitutionally doping graphene—a hexagonally-arranged single-atomic thickness carbon sheet—with nitrogen atoms. The result is a low-defect film with a tunable bandstructure amenable to a variety of device platforms and applications.
Source: phys.org