Along with the fast development of contemporary information technology,charge-based memories, such as DRAM and flash memory, or are being aggressively scaled down to meet the current trend of small size devices. A memory device with high density,faster speed, and low power consumption is desired to satisfy Moore's law in the next few decades. Among the candidates of next-generation memory devices, and cross-bar-shaped non-volatile resistive memory (memristor) is one of the most appealing solutions for its non-volatility,faster access speed, ultra-high density and easier fabrication process.
Source: phys.org